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VISHAY
BRT11/ 12/ 13
Vishay Semiconductors
Optocoupler, Phototriac Output
Features
* ITRMS = 300 mA * High Static dVcrq/dt < 10,000 V/s * Electrically Insulated between Input and output circuit * Microcomputer compatible - Very Low Trigger Current * Non-zero voltage detectors High input Sensitivity
A1 C2 NC 3 6 MT2 5 NC 4 MT1
Agency Approvals
* UL - File No. E52744 System Code J * DIN EN 60747-5-2(VDE0884) DIN EN 60747-5-5 pending Available with Option 1
i179041
Order Information
Part BRT11-H BRT12-H BRT13-H BRT11-M BRT12-M BRT13-M Remarks 400 V VDRM, 2 mA IFT, DIP-6 600 V VDRM, 2 mA IFT, DIP-6 800 V VDRM, 2 mA IFT, DIP-6 400 V VDRM, 3 mA IFT, DIP-6 600 V VDRM, 3 mA IFT, DIP-6 800 V VDRM, 3 mA IFT, DIP-6 600 V VDRM, 2 mA IFT, DIP-6 400 mil (option 6) 600 V VDRM, 2 mA IFT, SMD-6 (option 7) 600 V VDRM, 2 mA IFT, SMD-6 (option 9) 800 V VDRM, 2 mA IFT, DIP-6 400 mil (option 6) 800 V VDRM, 2 mA IFT, SMD-6 (option 7) 800 V VDRM, 2 mA IFT, SMD-6 (option 9) 600 V VDRM, 3 mA IFT, DIP-6 400 mil (option 6)
Applications
Industrial controls Office equipment Consumer appliances
Description
The BRT11/12/13 are AC optocouplers non-zero voltage detectors consisting of two electrically insulated lateral power ICs which integrate a thyristor system, a photo detector and noise suppression at the output and an IR GaAs diode input.
BRT12-H-X006 BRT12-H-X007 BRT12-H-X009 BRT13-H-X006 BRT13-H-X007 BRT13-H-X009 BRT12-M-X006
For additional information on the available options refer to Option Information.
Document Number 83689 Rev. 1.4, 26-Apr-04
www.vishay.com 1
BRT11/ 12/ 13
Vishay Semiconductors Absolute Maximum Ratings
VISHAY
Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Reverse voltage Forward continuous current Surge forward current Power dissipation t 10 s Test condition Symbol VR IF IFSM Pdiss Value 6 20 1.5 30 Unit V mA A mW
Output
Parameter Repetitive peak off-state voltage Test condition Part BRT11 BRT12 BRT13 RMS on-state current Single cycle surge current Power dissipation 50 Hz Symbol VDRM VDRM VDRM ITRMS ITSM Pdiss Value 400 600 800 300 3 600 Unit V V V mA A mW
Coupler
Parameter Max. power dissipation Ambient temperature Storage temperature Insulation test voltage between input/output circuit (climate in acc. with DIN 40046, part 2, Nov. 74) Reference voltage in acc. with VDE 0110 b Reference voltage in acc. with VDE 0110 b (insulation group C) Creepage resistance (in acc. with DIN IEC 112/VDE 0303, part 1) Insulation resistance (group IIIa acc. to DIN VDE 0109) VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C DIN humidity category, DIN 40 040 Creepage distance (input/output circuit) Clearance (input/output circuit)
1) 1)
Test condition
Symbol Ptot Tamb Tstg VISO
Value 630 - 40 to + 100 - 40 to + 150 5300
Unit mW C C VRMS
Vref Vref CTI
500 600 175
VRMS VDC
RIO RIO
1012 10 F 7.2 7.2
11

mm mm
Test AC voltage in acc. with DIN 57883, June 1980
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Document Number 83689 Rev. 1.4, 26-Apr-04
VISHAY
Electrical Characteristics
BRT11/ 12/ 13
Vishay Semiconductors
Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Forward voltage Reverse current Thermal resistance 2) junction - ambient
2)
Test condition IF = 10 mA VR = 6 V
Symbol VF IR Rthja
Min
Typ. 1.1
Max 1.35 10 750
Unit V A C/W
Static air, SITAC soldered in pcb or base plate.
Output
Parameter Critical rate of rise of off-state voltage Critical rate of rise of voltage at current commutation Test condition VD = 0.67 VDRM, TJ = 25 C VD = 0.67 VDRM, TJ = 80 C VD = 0.67 VDRM, TJ = 25 C, dI/dtcrq 15 A/ms VD = 0.67 VDRM, TJ = 80 C, dI/dtcrq 15 A/ms Critical rate of rise of on-state current Pulse current On-state voltage Off-state current Holding current Thermal resistance 2) junction ambient
2)
Symbol dV/dtcr dV/dtcr dV/dtcrq dV/dtcrq dI/dtcr
Min 10 5 10 5 8
Typ.
Max
Unit kV/s kV/s kV/s kV/s A/s
tp 5 s, f 0 100 Hz, dItp/dt 8 A/s IT = 300 mA TC = 80 C, VDRM VD = 10 V RthJA
Itp VT ID IH Rthja 0.5 80
2 2.3 100 500 125
A V A A C/W
Static air, SITAC soldered in pcb or base plate.
Coupler
Parameter Trigger current Trigger current temperature gradient Capacitance (input-output) VR = 0 V, f = 1 kHz Test condition VD = 10 V, H - Versions VD = 10 V, M - Versions Symbol IFT IFT IFT/Tj CIO Min 0.4 0.8 7 Typ. Max 2 3 14 2 Unit mA mA A/C pF
Document Number 83689 Rev. 1.4, 26-Apr-04
www.vishay.com 3
BRT11/ 12/ 13
Vishay Semiconductors Typical Characteristics (Tamb = 25 C unless otherwise specified)
VISHAY
tgd=f(IF/IFT25C) VD=200V
IFTN=f(tpIF) IFTN normalized to IFT refering to tpIF 1 m Vop=220V,f= 4 0 ...60Hz typ.
17239
17242
Fig. 1 Typical Trigger Delay Time
Fig. 4 Pulse Trigger Current
Ptot= (ITRMS)
IF = (VF)
17240
17243
Fig. 2 Power Dissipation 40 to 60 Hz Line Operation
Fig. 5 Typical Input Characteristics
ID=f(Tj) VD=800V
IT = (VT)
17241
17244
Fig. 3 Typical Off-State Current
Fig. 6 Typical Output Characteristics
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Document Number 83689 Rev. 1.4, 26-Apr-04
VISHAY
BRT11/ 12/ 13
Vishay Semiconductors
ITRMS = (TA) RthJA = 125 K/W 3)
ITRMS = (TPIN5)
RthJ-PIN5 = 16,5 K/W 4)
17245
17246
Fig. 7 Current Reduction
Fig. 8 Current Reduction
Package Dimensions in Inches (mm)
3 .248 (6.30) .256 (6.50)
2
1
pin one ID
ISO Method A
4
5
6
.335 (8.50) .343 (8.70) .039 (1.00) Min. .048 (1.22) .052 (1.32) .130 (3.30) .150 (3.81) 18 .033 (0.84) typ. .033 (0.84) typ. .100 (2.54) typ 3-9 .008 (.20) .012 (.30) .300-.347 (7.62-8.81) .130 (3.30) .150 (3.81) .300 (7.62) typ.
4 typ . .018 (0.46) .020 (0.51)
i178014
Document Number 83689 Rev. 1.4, 26-Apr-04
www.vishay.com 5
BRT11/ 12/ 13
Vishay Semiconductors
VISHAY
Option 6
.407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .028 (0.7) MIN.
Option 7
.300 (7.62) TYP .
Option 9
.375 (9.53) .395 (10.03) .300 (7.62) ref.
.180 (4.6) .160 (4.1) .0040 (.102)
.315 (8.0) MIN. .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .331 (8.4) MIN. .406 (10.3) MAX.
.0098 (.249)
.020 (.51) .040 (1.02)
.012 (.30) typ.
.315 (8.00) min.
15 max.
18450
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Document Number 83689 Rev. 1.4, 26-Apr-04
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
BRT11/ 12/ 13
Vishay Semiconductors
1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83689 Rev. 1.4, 26-Apr-04
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